Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout
Author:
Affiliation:
1. Green Infrastructure Innovation Center, Research and Development Group, Hitachi, Ltd., Kokubunji, Tokyo, Japan
Funder
Innovative Science and Technology Initiative for Security, Acquisition, Technology & Logistics Agency (ATLA), Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10144371.pdf?arnumber=10144371
Reference30 articles.
1. Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs
2. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
3. A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications
4. 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems
5. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions;Japanese Journal of Applied Physics;2024-01-01
2. First Demonstration of Trench-shaped 6.5-kV n-channel SiC IGBT with Trench-etched Double-diffused MOS (TED-MOS) Structure;2023 International Electron Devices Meeting (IEDM);2023-12-09
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