10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs-Reference-Cited by-同舟云学术

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10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

Published:2004-08 Issue:8 Volume:25 Page:556-558
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Ryu S.-H.,Krishnaswami S.,O'Loughlin M.,Richmond J.,Agarwal A.,Palmour J.,Hefner A.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29195/01317024.pdf?arnumber=1317024

Cited by 117 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Two Third-Generation 10 kV SiC MOSFET Die’s Switching Performance on a System Level;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

3. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2024

4. 4H-SiC Trench MOSFET with Half-Surrounded Gate for Improved Gate Oxide Reliability;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability;Chinese Physics B;2023-10-01

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