A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance
Author:
Affiliation:
1. Hubei Jiufengshan Laboratory,Systems and Device Technology,Dept of Integrated Power,Wuhan,China
2. Huazhong University of Science and Technology,School of Electrical and Electronic Engineering,Wuhan,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10601630/10601669/10602073.pdf?arnumber=10602073
Reference13 articles.
1. A 500 kHz Silicon Carbide (SiC) Single Switch Class-E Inverter
2. Material science and device physics in SiC technology for high-voltage power devices
3. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
4. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
5. Electron Transport at the SiC/SiO2 Interface
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