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A 500 kHz Silicon Carbide (SiC) Single Switch Class-E Inverter

  • Published:2018 Issue: Volume: Page:103-107
  • ISSN:2319-2518
  • Container-title:International Journal of Electrical and Electronic Engineering & Telecommunications.
  • language:
  • Short-container-title:IJEETC

Author:

Saadeh Osama S., ,Dalalah Zakariya,Zghoul Fadi R. Nessir,Abuelrub Ahmad,Saadeh Mahmood S.

Publisher

EJournal Publishing

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of drive circuit for ultra-audio controlled source electromagnetic transmitter;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

2. A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

3. A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

4. A Novel Mixed Control Strategy with Grid-Following and Grid-Forming for Renewable Energy Grid-Connected Inverter;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

5. Research and Design of 1700V 250A SiC MOSFET Driver;2022 IEEE 4th International Conference on Circuits and Systems (ICCS);2022-09-23
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