Research and Design of 1700V 250A SiC MOSFET Driver
Author:
Affiliation:
1. Automation Research and Design Institute of Metallurgical Industry,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9935818/9936057/09936209.pdf?arnumber=9936209
Reference6 articles.
1. Design and characteristic analysis of SiC MOSFET driver circuit [J];jian-qing;Semiconductor technology,2020
2. Analysis of Threshold Voltage and Drain Induced Barrier Lowering in Junctionless Double Gate MOSFET Using High-κ Gate Oxide
3. Arduino-Based Three-Phase Inverter Using Power MOSFET for Application in Microgrid Systems
4. Realization with Fabrication of Double-Gate MOSFET Based Third Order High Pass Filter
5. Analysis of Subthreshold Swing in Symmetric Junctionless Double Gate MOSFET Using high-k Gate Oxides
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