Analysis of Subthreshold Swing in Symmetric Junctionless Double Gate MOSFET Using high-k Gate Oxides
Author:
Publisher
EJournal Publishing
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation
Link
http://www.ijeetc.com/uploadfile/2019/1009/20191009041117130.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics;ECS Journal of Solid State Science and Technology;2024-07-01
2. A New Strategy to Recover Threshold Voltage of SiC MOSFET After Gamma Radiation by Self-Heating in Circuit;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
3. Inrush Current Suppression Circuit with Discharge Function for Airborne DC Power Supply;2022 IEEE 4th International Conference on Circuits and Systems (ICCS);2022-09-23
4. Research and Design of 1700V 250A SiC MOSFET Driver;2022 IEEE 4th International Conference on Circuits and Systems (ICCS);2022-09-23
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