A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability
Author:
Affiliation:
1. Hubei Jiufengshan Laboratory,Systems and Device Technology,Dept of Integrated Power,Wuhan,China
2. Huazhong University of Science and Technology,School of Electrical and Electronic Engineering,Wuhan,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10601630/10601669/10601984.pdf?arnumber=10601984
Reference10 articles.
1. Arduino-Based Three-Phase Inverter Using Power MOSFET for Application in Microgrid Systems
2. A 500 kHz Silicon Carbide (SiC) Single Switch Class-E Inverter
3. Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current
4. Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
5. Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors
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