Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09
3. Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process;Applied Physics Express;2022-06-09
4. Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current;IEEE Transactions on Electron Devices;2021-03
5. Estimation of Threshold Voltage in SiC Short-Channel MOSFETs;IEEE Transactions on Electron Devices;2018-07
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