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Estimation of Threshold Voltage in SiC Short-Channel MOSFETs

  • Published:2018-07 Issue:7 Volume:65 Page:3077-3080
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Tachiki KeitaORCID,Ono Takahisa,Kobayashi TakumaORCID,Tanaka HajimeORCID,Kimoto Tsunenobu

Funder

Super Cluster Program through the Japan Science and Technology Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Modeling and Simulation of Carrier Transport Properties in 4H-SiC;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

3. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02

4. Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials;Transactions on Electrical and Electronic Materials;2023-12-20

5. An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance;IEEE Transactions on Electron Devices;2023-12
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