Author:
Matin M.,Saha A.,Cooper J.A.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
71 articles.
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1. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2024
2. Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect;Journal of Electronic Science and Technology;2023-12
3. Influence of Temperature on Dynamic and Static Parameters of 6.5kV Welding SiC MOSFET Module;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. A Short Channel Self-Alignment Process for High-Voltage VDMOSFETs in 4H-SiC;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Fabrication and Characterization of 750V SiC MOSFET for New Energy Vehicles;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27