Fabrication and Characterization of 750V SiC MOSFET for New Energy Vehicles
Author:
Affiliation:
1. SouthEast University,Nanjing,Jiangsu,210037
2. State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology,Nanjing,Jiangsu,210016
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399708.pdf?arnumber=10399708
Reference8 articles.
1. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
2. A Self-Aligned Process for High-Voltage, Short-Channel Vertical DMOSFETs in 4H-SiC
3. Development of 1.7kV 40m Ω 4H-SiC Power DMOSFETs, ”[C];Liu,2017
4. Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs
5. Simulation and Fabrication of 15kV/10A SiC Power MOSFET[J];Li;Research &Progrecess of SSE,2021
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