4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
Author:
Affiliation:
1. SiCED Electronics Development
2. Acreo AB
3. Infineon Technologies AG
4. SiCED Electronics Development GmbH & Co. KG
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.433-436.769.pdf
Reference8 articles.
1. R. Schörner et al., Appl. Phys. Lett., Vol. 80, No. 22, 3 June 2002, pp.4253-4255.
2. Ph. Jamet et al., Journ. of Appl. Physics, Vol. 90, Nr. 11, 1 Dec. (2001).
3. G.Y. Chung et al., IEEE Electron Dev. Letters, Vol. 22, No. 4 (2001) pp.176-178.
4. H. Yano et al., Appl. Phys. Lett., Vol. 78, No. 3 (2001) pp.374-376.
5. R. Schörner, et al., IEEE Electron Dev. Let., VOL. 20, No. 5 (1999) pp.241-244.
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