On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Published:2019-10-07 Issue:15 Volume:115 Page:152102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rasinger Fabian¹²^ORCID,Hauck Martin²^ORCID,Rescher Gerald³,Aichinger Thomas³,Weber Heiko B.²,Krieger Michael²^ORCID,Pobegen Gregor¹^ORCID

Affiliation:

1. Kompetenzzentrum für Automobil- und Industrieelektronik GmbH, Europastraße 8, 9524 Villach, Austria

2. Lehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstraße 7/A3, 91058 Erlangen, Germany

3. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria

Funder

Österreichische Forschungsförderungsgesellschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5117829

Reference29 articles.

1. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

2. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

3. Material science and device physics in SiC technology for high-voltage power devices

4. Performance and ruggedness of 1200V SiC — Trench — MOSFET

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

2. Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs*;Chinese Physics B;2021-04-01

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