Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface-Reference-Cited by-同舟云学术

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Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface

Published:2021-10-29 Issue: Volume: Page:225-247
ISSN:
Container-title:Wide Bandgap Semiconductors for Power Electronics
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Author:

Pobegen Gregor,Aichinger Thomas

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch9

Reference54 articles.

1. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs;Aichinger T.;Microelectron. Reliab.,2018

2. Rescher G. Pobegen G. Aichinger T. andGrasser T.(2016).On the subthreshold drain current sweep hysteresis of 4H‐SiC MOSFETs.IEEE International Electron Device Meeting (IEDM) pp. 10.8.1–10.8.4. https://doi.org/10.1109/IEDM.2016.7838392.

3. Interface properties of metal‐oxide‐semiconductor structures on n‐type 6H and 4H‐SiC;Friedrichs P.;J. Appl. Phys.,1996

4. Rescher G.(2018).Behaviorof SiC‐MOSFETs under temperature and voltage stress. PhD thesis TU Vienna Institute of Microelectronics.

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