Interface properties of metal‐oxide‐semiconductor structures onn‐type 6H and 4H‐SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362389
Reference12 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Monolithic NMOS digital integrated circuits in 6H-SiC
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Electrical properties of thermal oxide grown onn‐type 6H‐silicon carbide
5. Dielectric strength of thermal oxides on 6H‐SiC and 4H‐SiC
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