On the 3C-SiC/SiO<sub>2</sub> n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage-Reference-Cited by-同舟云学术

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On the 3C-SiC/SiO₂ n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage

Published:2022-09-18 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
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Author:

Lophitis Neophytos¹,Arvanitopoulos Anastasios²,Jennings Mike R.³,Mawby Philip A.⁴,Antoniou Marina⁴

Affiliation:

1. University of Nottingham,Faculty of Engineering,Nottingham,UK

2. Power and Sensor Systems, Infineon Technologies Austria AG,Villach,Austria

3. College of Engineering, Swansea University,Swansea,UK

4. School of Engineering, University of Warwick,Coventry,UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936319.pdf?arnumber=9936319

Reference43 articles.

1. Investigating positive oxide charge in the SiO2/3C-SiC MOS system

2. Intrinsic SiC/SiO2 Interface States

3. High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack

4. Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

5. Interface Properties of 4H-SiC ( $11\bar {2}0$ ) and ( $1\bar {1}00$ ) MOS Structures Annealed in NO

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices;Materials;2023-08-15

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