Investigating positive oxide charge in the SiO2/3C-SiC MOS system
Author:
Affiliation:
1. Tyndall National Institute, University College Cork, Cork, Ireland
2. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauki, 03028 Kyiv, Ukraine
3. ANVIL Semiconductors Ltd., Coventry, UK
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5030636
Reference16 articles.
1. Fundamentals of Power Semiconductor Devices
2. Fundamentals of Silicon Carbide Technology
3. SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
4. 3C-SiC Film Growth on Si Substrates
5. 3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature
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