Performance and ruggedness of 1200V SiC — Trench — MOSFET-Reference-Cited by-同舟云学术

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Performance and ruggedness of 1200V SiC — Trench — MOSFET

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Peters Dethard,Siemieniec Ralf,Aichinger Thomas,Basler Thomas,Esteve Romain,Bergner Wolfgang,Kueck Daniel

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988904.pdf?arnumber=7988904

Cited by 102 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical-Channel Fin-SiC (VC Fin-SiC) With Partially Highly Doped JFET for 3.3-kV Applications;IEEE Transactions on Electron Devices;2024-09

2. Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures;Solid State Phenomena;2024-08-23

3. Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation;IEEE Transactions on Power Electronics;2024-08

4. A Trench and Field Limiting Rings Co-Assisted JTE Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices;IEEE Electron Device Letters;2024-08

5. Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design;IEEE Transactions on Nuclear Science;2024-08

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