Performance and ruggedness of 1200V SiC — Trench — MOSFET-Reference-Cited by-同舟云学术

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Performance and ruggedness of 1200V SiC — Trench — MOSFET

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Peters Dethard,Siemieniec Ralf,Aichinger Thomas,Basler Thomas,Esteve Romain,Bergner Wolfgang,Kueck Daniel

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988904.pdf?arnumber=7988904

Cited by 85 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures;Microelectronics Reliability;2023-11

4. A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability;IET Power Electronics;2023-09-05

5. SiC MOSFET Inverter Design, Considering Unplanned Events for Electric Aviation;2023 12th International Conference on Renewable Energy Research and Applications (ICRERA);2023-08-29

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