Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures

Abstract

This research investigates the static and dynamic characteristics of 4H-Silicon Carbide (SiC) MOSFETs with different gate structures: planar (Device A), one-side shielded trench (Device B), and double trench (Device C). We analyze threshold voltage, on-state resistance, transconductance, gate-to-source capacitances, and reverse transfer/miller capacitances with gate bias. Additionally, non-linear charges, including input charge, miller plateau, and total gate charge, are examined. Switching losses are assessed over a temperature range of 25° C to 125° C. Our findings reveal distinct performance differences, offering valuable insights for optimizing SiC MOSFETs in electric vehicle applications.