Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation-Reference-Cited by-同舟云学术

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Published:2002-06-03 Issue:22 Volume:80 Page:4253-4255
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schörner Reinhold,Friedrichs Peter,Peters Dethard,Stephani Dietrich,Dimitrijev Sima,Jamet Philippe

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1483125

Reference13 articles.

1. Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates

2. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

4. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

5. “Carbon cluster model” for electronic states at interfaces

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