A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements-Reference-Cited by-同舟云学术

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Author:

Nicholls Jordan R.¹²^ORCID,Vidarsson Arnar M.³^ORCID,Haasmann Daniel¹²,Sveinbjörnsson Einar Ö.³⁴^ORCID,Dimitrijev Sima¹²^ORCID

Affiliation:

1. Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD 4111, Australia

2. School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia

3. Science Institute, University of Iceland, IS-107, Reykjavik, Iceland

4. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden

Funder

Australian Research Council Linkage Project

University of Iceland Research Fund

Icelandic Centre for Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference33 articles.

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