A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1340861
Reference19 articles.
1. 4H-SiC MOSFETs utilizing the H2 surface cleaning technique
2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
3. H2 surface treatment for gate-oxidation of SiC metal-oxide-semiconductor field effect transisitsors
4. MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
5. Hot carrier-induced photon emission in 6H and 4H–SiC MOSFETs
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