MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
Author:
Affiliation:
1. Nara Institute of Science and Technology
2. Kyoto University
3. University of Erlangen-Nürnberg
4. Friedrich-Alexander-Universität Erlangen-Nürnberg
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1109.pdf
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