Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents-Reference-Cited by-同舟云学术

Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents

Published:2022-07-28 Issue: Volume: Page:1-17
ISSN:0953-7325
Container-title:Technology Analysis & Strategic Management
language:en
Short-container-title:Technology Analysis & Strategic Management

Author:

Pan Weiwei¹^ORCID,Jian Lirong¹,Liu Tao²

Affiliation:

1. College of Economics and Management, Nanjing University of Aeronautics and Astronautics, Nanjing, People’s Republic of China

2. State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing, People’s Republic of China

Funder

The Key Project of Philosophy and Social Science Research in Colleges and Universities of Jiangsu Province

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Management Science and Operations Research,Strategy and Management

Link

https://www.tandfonline.com/doi/pdf/10.1080/09537325.2022.2106419

Reference62 articles.

1. The dual frontier: Patented inventions and prior scientific advance

2. Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors

3. The decline of science in corporate R&D

4. Pajek — Analysis and Visualization of Large Networks

5. Bridging Academia and Industry: How Geographic Hubs Connect University Science and Corporate Technology

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