Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Author:
Affiliation:
1. Philips Electronics North America Corporation
2. Rensselaer Polytechnic Institute
3. General Electric Global Research Center
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.1013.pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers;IEEE Transactions on Electron Devices;2007-11
3. Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs;Solid-State Electronics;2002-10
4. Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs;Journal of Electronic Materials;2002-05
5. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs;Materials Science Forum;2002-04
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