Anomalously High Density of Interface States Near the Conduction Band in SiO<sub>2</sub>/4H-SiC MOS Devices-Reference-Cited by-同舟云学术

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Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices

Published:2000-05 Issue: Volume:338-342 Page:1069-1072
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Das Mrinal K.¹,Um Benjamin S.²,Cooper James A.²

Affiliation:

1. Cree Incorporation

2. Purdue University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.1069.pdf

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2. Study of defects distribution in SiO2/SiC with plasma oxidation and post oxidation annealing;Applied Surface Science;2023-02

3. Tailoring the 4H-SiC/SiO2MOS-interface for SiC-based power switches;Japanese Journal of Applied Physics;2016-06-30

4. Interface Properties of 4H-SiC ( $11\bar {2}0$ ) and ( $1\bar {1}00$ ) MOS Structures Annealed in NO;IEEE Transactions on Electron Devices;2015-02

5. Device Processing of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

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