4H-SiC Trench MOSFET with Half-Surrounded Gate for Improved Gate Oxide Reliability-Reference-Cited by-同舟云学术

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4H-SiC Trench MOSFET with Half-Surrounded Gate for Improved Gate Oxide Reliability

Published:2023-11-27 Issue: Volume: Page:31-34
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Chen Wei¹,Yuan Jun¹,Guo Fei¹,Wu Yangyang¹,Chen Zhijie¹,Wang Kuan¹,Xin Guoqing²,Wang Zhiqiang²

Affiliation:

1. Hubei Jiufengshan Laboratory,Dept of Integrated Power Systems and Device Technology,Wuhan,China,430206

2. School of Electrical and Electronic Engineering, Huazhong University of Science and Technology,Wuhan,China,430074

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399719.pdf?arnumber=10399719

Reference10 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

3. Novel developments towards increased SiC power device and module efficiency

4. 4H-SiC Trench MOSFET with Bottom Oxide Protection

5. The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance;Peters,2017

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