Author:
Kitai Hidenori,Yamaguchi Tsutomu,Hozumi Yasuo,Shiomi Hiromu,Fukuda Kenji
Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
13 articles.
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1. Termination Design of 6.5kV SiC MOSFET with Epitaxial Current Spreading Layer;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout;IEEE Transactions on Electron Devices;2023-07
3. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance;Journal of Semiconductors;2023-05-01
4. 1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
5. Underlying Technologies in Medium Voltage Systems;The Journal of The Institute of Electrical Engineers of Japan;2022-12-01