Author:
Howell Robert S.,Buchoff Steven,Van Campen Stephen,McNutt Ty R.,Hearne Harold,Ezis Andris,Sherwin Marc E.,Clarke R. Chris,Singh Ranbir
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
11 articles.
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2. Silicon Carbide Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11
3. A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications;Japanese Journal of Applied Physics;2019-04-01
4. 6.9-cm2Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA;IEEE Journal of Emerging and Selected Topics in Power Electronics;2016-09
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