First Demonstration of Trench-shaped 6.5-kV n-channel SiC IGBT with Trench-etched Double-diffused MOS (TED-MOS) Structure-Reference-Cited by-同舟云学术

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First Demonstration of Trench-shaped 6.5-kV n-channel SiC IGBT with Trench-etched Double-diffused MOS (TED-MOS) Structure

Published:2023-12-09 Issue: Volume:54 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Watanabe Naoki¹,Shimizu Haruka¹,Shima Akio¹

Affiliation:

1. Green Infrastructure Innovation Center,Research and Development Group, Hitachi, Ltd.,Tokyo,Japan

Funder

Technology Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413693.pdf?arnumber=10413693

Reference10 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. High-Voltage, High-Performance Switch Using Series-Connected IGBTs

3. 6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

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