10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems-Reference-Cited by-同舟云学术

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10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Published:2014-09 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Pala Vipindas,Brunt Edward V.,Cheng Lin,O'Loughlin Michael,Richmond Jim,Burk Albert,Allen Scott T.,Grider David,Palmour John W.,Scozzie Charles J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6926643/6953358/06953428.pdf?arnumber=6953428

Cited by 78 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05

2. Comparison of Two Third-Generation 10 kV SiC MOSFET Die’s Switching Performance on a System Level;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Closed-Loop Current Control of a Three-Phase, Two-Level Medium Voltage Power Converter Enabled by 10 kV SiC MOSFETs;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

4. A Novel Substrate-Baseplate Structure for Medium Voltage SiC MOSFET Device;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10

5. Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement;IEEE Transactions on Industry Applications;2024-05

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