A Novel Substrate-Baseplate Structure for Medium Voltage SiC MOSFET Device
Author:
Affiliation:
1. Xi'an Jiaotong University,State key laboratory of electrical insulation and power equipment,Xi'an,China
2. Equipment Technology Center State Grid Shanghai Electric Power Research Institute,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10582916/10582978/10583728.pdf?arnumber=10583728
Reference14 articles.
1. The Future Renewable Electric Energy Delivery and Management (FREEDM) System: The Energy Internet
2. 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems
3. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
4. A Survey of Wide Bandgap Power Semiconductor Devices
5. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
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