Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Author:

Palmour J. W.,Cheng L.,Pala V.,Brunt E. V.,Lichtenwalner D. J.,Wang G-Y,Richmond J.,O'Loughlin M.,Ryu S.,Allen S. T.,Burk A. A.,Scozzie C.

Publisher

IEEE

Cited by 156 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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5. Study of Poly-Si Gate Annealing on the Electrical Characteristics of 1200 V 4H-SiC MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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