Vertical N-Type and P-Type Nanosheet FETs With C-Shaped Channel-Reference-Cited by-同舟云学术

Vertical N-Type and P-Type Nanosheet FETs With C-Shaped Channel

Published:2023-03 Issue:3 Volume:70 Page:1380-1385
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xiao Z. R.¹^ORCID,Zhu H. L.¹,Wang Q.¹,Chen Z.¹,Liu Z. Y.¹,Zhang Y. K.¹^ORCID,Yan Z. J.¹,Shi Y. F.¹^ORCID,Zhou N.¹,Li J. J.¹,Gao J. F.¹,Ai X. Z.¹,Lu S. S.¹,Huang W. X.¹^ORCID,Xiong W. J.¹,Kong Z. Z.¹,Xiang J. J.¹,Zhang Y.¹,Zhao J.¹,Liu J. B.¹,Lu Y. H.¹^ORCID,Bai G. B.¹,He X. B.¹,Du A. Y.¹^ORCID,Yang H.¹^ORCID,Yang T.¹,Wu Z. H.¹^ORCID,Li J. F.¹,Luo J.¹^ORCID,Wang W. W.¹,Ye T. C.¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

Vertical Gate-All-Around for Dynamic Random Access Memory (DRAM) and Process Development under Beijing Superstring Academy Memory Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10035482.pdf?arnumber=10035482

Reference21 articles.

1. Process Technology Variation