Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905415
Reference25 articles.
1. (110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
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