Author:
Young C.D.,Akarvardar K.,Baykan M.O.,Matthews K.,Ok I.,Ngai T.,Ang K.-W.,Pater J.,Smith C.E.,Hussain M.M.,Majhi P.,Hobbs C.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference77 articles.
1. International Technology Roadmap for Semiconductors. .
2. Mobility evaluation in transistors with charge-trapping gate dielectrics;Bersuker;Appl Phys Lett,2005
3. High-k/metal-gate stack and its MOSFET characteristics;Chau;IEEE Electron Device Lett,2004
4. Effective electron mobility in Si inversion layers in metal-oxide semiconductor systems with a high-k insulator: the role of remote phonon scattering;Fischetti;J Appl Phys,2001
5. Young CD, Kerber A, Hou TH, Cartier E, Brown GA, Bersuker G, et al. Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. In: 203rd Fall meeting of the electrochemical society, physics and technology of high-K gate dielectrics – II, Orlando, FL; 2003. p. 347–62.
Cited by
23 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献