Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference59 articles.
1. Kahng D (1960) Silicon-silicon dioxide field induced surface devices. In the Solid State Device Research Conf, Pittsburgh, PA June 1960
2. Hisamoto D, Lee W-C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T-J, Bokor J, Hu C (2000) FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans Electron Devices 47(12):2320–2325
3. Tripathi SL, Mishra R, Mishra RA (2012) Characteristic comparison of connected DG FINFET, TG FINFET and Independent Gate FINFET on 32 nm technology. IEEE 2nd International Conference on Power, Control and Embedded Systems, pp 1–7
4. Yu B, Chang L, Ahmed S, Wang H, Bell S, Yang CY, Tabery C, Ho C, Xiang Q, King TJ, Bokor J (2002) FinFET scaling to 10 nm gate length. IEEE International Electron Devices Meeting:251–254
5. Bhattacharya D, Jha NK (2014) FinFETs: from devices to architectures. Advances in Electronics, Article ID 365689:1–21. https://doi.org/10.1155/2014/365689
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献