A FinFET-based low-power, stable 8T SRAM cell with high yield-Reference-Cited by-同舟云学术

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A FinFET-based low-power, stable 8T SRAM cell with high yield

Published:2024-02 Issue: Volume:175 Page:155102
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Mani Elangovan^ORCID,Nimmagadda Padmaja^ORCID,Basha Shaik Javid,El-Meligy Mohammed A.,Mahmoud Haitham A.^ORCID

Funder

King Saud University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference64 articles.

1. Energy-efficient and variability-resilient 11T SRAM design using data-aware read-write assist (DARWA) technique for low-power applications;Thirugnanam;Sensors,2023

2. A low power IoT sensor node architecture for waste management within smart cities context;Cerchecci;Sensors,2018

3. Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology;Mani;AEU-Int J Electr Commun,2022

4. A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time;Sachdeva;AEU-Int J Electron Commun,2023

5. Magnetic Field Analysis of Surface-Mounted Permanent Magnet Motors Based on an Improved Conformal Mapping Method;Ding;IEEE Transactions on Industry Applications,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model;Silicon;2024-05-13

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