Comparison of different surface orientation in narrow fin MuGFETs-Reference-Cited by-同舟云学术

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Comparison of different surface orientation in narrow fin MuGFETs

Published:2009-12 Issue:12 Volume:86 Page:2381-2384
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lee Chi-Woo,Afzalian Aryan,Ferain Isabelle,Yan Ran,Dehdashti Nima,Byun Ki-Yeol,Colinge Cynthia,Xiong Weize,Colinge Jean-Pierre

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Performance and potential of ultrathin accumulation-mode SIMOX MOSFET's

2. Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations

3. CMOS Circuit Performance Enhancement by Surface Orientation Optimization

4. Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors;Journal of Applied Physics;2015-01-21

2. Understanding the FinFET Mobility by Systematic Experiments;Lecture Notes in Nanoscale Science and Technology;2013

3. (110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation;Solid-State Electronics;2012-12

4. Effects of device layout on the drain breakdown voltages in MuGFETs;Microelectronics Reliability;2011-09

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