A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits-Reference-Cited by-同舟云学术

A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits

Published:2023-02 Issue:2 Volume:44 Page:333-336
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Ang¹^ORCID,Shen Yi¹^ORCID,Li Ziqian¹^ORCID,Li Fan¹,Sun Ruize²^ORCID,Mitrovic Ivona Z.³^ORCID,Wen Huiqing¹^ORCID,Lam Sang¹^ORCID,Liu Wen¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

3. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, U.K.

Funder

Suzhou Industrial Park Initiative Platform

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10027614/09970328.pdf?arnumber=9970328

Reference21 articles.

1. Silicon, GaN and SiC: There’s room for all: An application space overview of device considerations;spazia;Proc 10th Int Symp Power Semiconductor Devices and ICs (ISPSD),2018

2. 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

3. Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics

4. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

5. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

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