Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature
Author:
Affiliation:
1. Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10132335/10103625.pdf?arnumber=10103625
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1. A passively temperature-compensated dual-frequency aln-on-silicon resonator for accurate pressure sensing
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5. Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
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