GaN Memory Operational at 300 °C
Author:
Affiliation:
1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
2. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1205, Bangladesh
Funder
National Aeronautics and Space Administration
Lockheed Martin Corporation
Air Force Office of Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09933760.pdf?arnumber=9933760
Reference33 articles.
1. A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs
2. 3-D Stacking of SiC Integrated Circuit Chips With Gold Wire Bonded Interconnects for Long-Duration High-Temperature Applications
3. Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
4. Highly-scaled self-aligned GaN complementary technology based on a GaN-on-Si platform;xie;IEDM Tech Dig,2022
5. 1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C;Applied Physics Letters;2024-05-13
2. Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments;Applied Physics Letters;2024-04-22
3. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode;Journal of Semiconductors;2024-03-01
4. Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer;IEEE Electron Device Letters;2024-03
5. Recent advances in III–V nitrides: properties, applications and perspectives;Journal of Materials Chemistry C;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3