Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Illinois at Urbana--Champaign, Urbana, IL, USA
Funder
Defense Advanced Research Projects Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10449685/10387459.pdf?arnumber=10387459
Reference30 articles.
1. High-temperature electronics - a role for wide bandgap semiconductors?
2. Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment
3. GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review
4. Wide bandgap semiconductor materials and devices
5. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C;Applied Physics Letters;2024-05-13
2. Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments;Applied Physics Letters;2024-04-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3