Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment-Reference-Cited by-同舟云学术

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Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

Published:2021-03-06 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Aerospace Conference (50100)
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Author:

Eisner Savannah R.,Alpert Hannah S.,Chapin Caitlin A.,Yalamarthy Ananth Saran,Satterthwaite Peter F.,Nasiri Ardalan,Port Sara,Ang Simon,Senesky Debbie G.

Funder

National Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9438108/9438128/09438131.pdf?arnumber=9438131

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance;IEEE Transactions on Dielectrics and Electrical Insulation;2024-06

2. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C;Applied Physics Letters;2024-05-13

3. Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments;Applied Physics Letters;2024-04-22

4. Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer;IEEE Electron Device Letters;2024-03

5. Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures;Applied Physics Letters;2023-10-09

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