200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs-Reference-Cited by-同舟云学术

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Cosnier T.¹,Syshchyk O.¹,De Jaeger B.¹,Geens K.¹,Cingu D.¹,Fabris Elena¹,Borga M.¹,Vohra A.¹,Zhao M.¹,Bakeroot B.¹,Wellekens D.¹,Magnani A.¹,Vudumula P.²,Chatterjee U.¹,Langer R.¹,Decoutere S.¹

Affiliation:

1. Imcc,Leuven,Belgium,3001

2. KU Leuven,Department of Electrical Engineering,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720591.pdf?arnumber=9720591

Reference7 articles.

1. GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions

2. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

3. An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

4. Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

5. 700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

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