Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform-Reference-Cited by-同舟云学术

Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform

Published:2023-05-28 Issue: Volume: Page:
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Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Li Fan¹,Li Ang¹,Wang Yubo¹,Zhu Yuhao¹,Yu Chengruiyuan¹,Ding Chengmurong¹,Wu Shiqiang¹,Liu Wen¹,Yu Guohao²,Gao Xiaotian³,Wang Zheming²,Zhang Baoshun²

Affiliation:

1. School of Advanced Technology, Xi'an Jiaotong-Liverpool University,Suzhou,China,215123

2. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China,Hefei,China,230026

3. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS,Nanofabrication facility,Suzhou,Jiangsu,China,215123

Funder

Youth Innovation Promotion Association CAS

National Natural Science Foundation of China

Publisher

IEEE

Link

Reference11 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Demonstration of the p-GaN Gate HEMT with Crystalline GaO_x/GaO_xN_1-xPassivation;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02