Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 611731, China
2. The Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan 523808, China
Abstract
In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG channel is tailored and connected to the top metal gate, which acts as a local back gate. Benefiting from the dual-gate structure (i.e., top metal gate and 2DEG BBG), the drain current of the p-MISFET is significantly improved from −2.1 (in the conv. device) to −9.1 mA/mm (in the BBG device). Moreover, the dual-gate design also bodes well for the gate to p-channel control; the subthreshold slope (SS) is substantially reduced from 148 to ~60 mV/dec, and such a low SS can be sustained for more than 3 decades. The back gate effect and the inherent hole compensation mechanism of the dual-gate structure are thoroughly studied by TCAD simulation, revealing their profound impact on enhancing the subthreshold and on-state characteristics in the BBG p-MISFET. Furthermore, the decent device performance of the proposed BBG p-MISFET is projected to the complementary logic inverters by mixed-mode simulation, showcasing excellent voltage transfer characteristics (VTCs) and dynamic switching behavior. The proposed BBG p-MISFET is promising for developing GaN-on-Si monolithically integrated complementary logic and power devices for high efficiency and compact GaN power IC.
Funder
National Natural Science Foundation of China
Guangdong Basic and Applied Basic Research Foundation
Sichuan Science and Technology Program
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