A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Author:

Wang Haochen1ORCID,Chen Kuangli1,Yang Ning1,Zhu Jianggen1,Duan Enchuan1,Huang Shuting1,Zhao Yishang1,Zhang Bo1,Zhou Qi12ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 611731, China

2. The Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan 523808, China

Abstract

In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG channel is tailored and connected to the top metal gate, which acts as a local back gate. Benefiting from the dual-gate structure (i.e., top metal gate and 2DEG BBG), the drain current of the p-MISFET is significantly improved from −2.1 (in the conv. device) to −9.1 mA/mm (in the BBG device). Moreover, the dual-gate design also bodes well for the gate to p-channel control; the subthreshold slope (SS) is substantially reduced from 148 to ~60 mV/dec, and such a low SS can be sustained for more than 3 decades. The back gate effect and the inherent hole compensation mechanism of the dual-gate structure are thoroughly studied by TCAD simulation, revealing their profound impact on enhancing the subthreshold and on-state characteristics in the BBG p-MISFET. Furthermore, the decent device performance of the proposed BBG p-MISFET is projected to the complementary logic inverters by mixed-mode simulation, showcasing excellent voltage transfer characteristics (VTCs) and dynamic switching behavior. The proposed BBG p-MISFET is promising for developing GaN-on-Si monolithically integrated complementary logic and power devices for high efficiency and compact GaN power IC.

Funder

National Natural Science Foundation of China

Guangdong Basic and Applied Basic Research Foundation

Sichuan Science and Technology Program

Publisher

MDPI AG

Reference38 articles.

1. Progress in High Voltage SiC and GaN Power Switching Devices;Chow;Mater. Sci. Forum,2014

2. GaN-on-Si Power Technology: Devices and Applications;Chen;IEEE Trans. Electron Devices,2017

3. GaN-based power devices: Physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021

4. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems;Su;Semicond. Sci. Technol.,2013

5. Apparao, D., Ghaffari, R., Venkatesh, B., and Wu, B. (2015, January 26–28). A survey on energy storage technologies in power systems. Proceedings of the 2015 IEEE Electrical Power and Energy Conference (EPEC), London, UK.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3