Progress in High Voltage SiC and GaN Power Switching Devices-Reference-Cited by-同舟云学术

Progress in High Voltage SiC and GaN Power Switching Devices

Published:2014-02 Issue: Volume:778-780 Page:1077-1082
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Chow T. Paul¹

Affiliation:

1. Rensselaer Polytechnic Institute

Abstract

The present status of the development and commercialization of SiC and GaN power devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.1077.pdf

Reference32 articles.

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