Planar GaN Power Integration – The World is Flat
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372069.pdf?arnumber=9372069
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique;IEEE Electron Device Letters;2024-02
2. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01
3. A novel double PN-junction Isolation Substrate for Isolating High and Low Side HEMTs in Half-bridge Integrated Circuits;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability;IEEE Electron Device Letters;2023-10
5. Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures;Applied Physics Letters;2023-09-25
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