Planar GaN Power Integration – The World is Flat
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372069.pdf?arnumber=9372069
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5. Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer;IEEE Transactions on Electron Devices;2024-04
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