650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, China
2. School of Physics, Peking University, Beijing, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10265125/10236521.pdf?arnumber=10236521
Reference25 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. The 2018 GaN power electronics roadmap
3. CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications;Ho Kwan
4. An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
5. Planar GaN Power Integration – The World is Flat
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1. Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT;Applied Physics Letters;2024-03-04
2. High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension;IEEE Transactions on Electron Devices;2024-03
3. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique;IEEE Electron Device Letters;2024-02
4. GaN Power Integration Technology and Its Future Prospects;IEEE Transactions on Electron Devices;2023
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